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Author Manzoli, José Eduardo ♦ Pirolla, Jorge Luis ♦ Moura, Eduardo S. ♦ Tadeu, Judas ♦ Morettin, Pedro A.
Source CiteSeerX
Content type Text
File Format PDF
Subject Domain (in DDC) Computer science, information & general works ♦ Data processing & computer science
Subject Keyword Simulated Approach ♦ Light Hole ♦ Simplest Structure ♦ New Development ♦ Quantum Well ♦ Single Quantum Well ♦ Heavy Hole ♦ Typical Monolayer Value ♦ Abstract Semiconductor Heterostructures ♦ Many Optoelectronic Device ♦ Nanometric Dimension ♦ Optical Transition ♦ Conduction Band ♦ Electronic Transition ♦ Valence Band
Abstract Abstract � Semiconductor heterostructures of nanometric dimensions represent a challenge in Metrology, requiring innovations and new developments. A single quantum well is the simplest structure of this nature, the basis for many optoelectronic devices, like lasers. In this work it is calculated the eigenstates of electrons, light holes and heavy holes of quantum wells of GaAs into Al0.2Ga0.8As. It was varied the width of these wells by typical monolayer values, and evaluated implications in the electronic transitions from valence band to conduction band. Results demonstrated that uncertainties as less as 0.35 nm in the quantum well width cause optical transitions up to 13meV.
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research
Education Level UG and PG ♦ Career/Technical Study
Publisher Date 2009-01-01