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Author Pop, Eric ♦ Goodson, Kenneth E.
Source CiteSeerX
Content type Text
File Format PDF
Language English
Subject Domain (in DDC) Computer science, information & general works ♦ Data processing & computer science
Subject Keyword Novel Transistor Design ♦ Drain Series ♦ Source Injection Electrical Resistance ♦ Material Boundary Thermal Resistance ♦ Important Part ♦ Non-traditional Transistor Geometry ♦ Thermal Device Design ♦ Nanoscale Transistor ♦ Nanowire Device ♦ Ultra-thin Body ♦ Thermal Design ♦ Microprocessor Engineering ♦ Electronic System ♦ Transistor Gate Length ♦ Nanometer-scale Hot Spot ♦ Volume Ratio ♦ Heat Conduction ♦ Classical Diffusion Theory Prediction ♦ Thermal Phenomenon ♦ Ballistic Phonon Transport ♦ Sub-continuum Phenomenon ♦ Ballistic Electron Transport ♦ Hot Spot ♦ Conduction Cooling ♦ Transistor Drain Region ♦ Material Boundary ♦ Transistor Geometry ♦ Increased Surface ♦ Hot Spot Region ♦ Novel Material ♦ Thermal Analysis
Description As transistor gate lengths are scaled to 50 nm and below thermal device design is becoming an important part of microprocessor engineering. Decreasing dimensions lead to nanometer-scale hot spots in the transistor drain region, which may increase the drain series and source injection electrical resistances. Such trends are accelerated with the introduction of novel materials and non-traditional transistor geometries, like ultra-thin body, FinFET, or nanowire devices, which impede heat conduction. Thermal analysis is complicated by sub-continuum phenomena including ballistic electron transport, which displaces and reshapes the hot spot region compared with classical diffusion theory predictions. Ballistic phonon transport from the hot spot and between material boundaries impedes conduction cooling. The increased surface to volume ratio of novel transistor designs also leads to a larger contribution from material boundary thermal resistance. This paper surveys trends in transistor geometries and materials, along with their implications for the thermal design of electronic systems.
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research
Education Level UG and PG ♦ Career/Technical Study
Learning Resource Type Article
Publisher Date 2004-01-01
Publisher Institution in Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems