|Author||Nirmal, H. K. ♦ Yadav, Nisha ♦ Lal, Pyare ♦ Alvi, P. A.|
|Source||United States Department of Energy Office of Scientific and Technical Information|
|Subject Keyword||NANOSCIENCE AND NANOTECHNOLOGY ♦ MATERIALS SCIENCE ♦ EV RANGE ♦ GAIN ♦ GALLIUM ARSENIDES ♦ HAMILTONIANS ♦ HETEROJUNCTIONS ♦ HOLES ♦ INDIUM ARSENIDES ♦ QUANTUM WELLS ♦ VALENCE ♦ VISIBLE RADIATION|
|Abstract||In this paper, we have simulated optical gain in type-II InGaAs/GaAsSb quantum well based nano-scale heterostructure. In order to simulate the optical gain, the heterostructure has been modeled with the help of six band k.p method. The 6 × 6 diagonalized k.p Hamiltonian has been solved to evaluate the valence sub-bands (i.e. light and heavy hole energies); and then optical matrix elements and optical gain within TE (Transverse Electric) mode has been calculated. The results obtained suggest that peak optical gain in the heterostructure can be achieved at the lasing wavelength ~ 1.95 µm (SWIR region) and at corresponding energy ~ 0.635 eV.|
|Learning Resource Type||Article|
|Publisher Place||United States|
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