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Author Nirmal, H. K. ♦ Yadav, Nisha ♦ Lal, Pyare ♦ Alvi, P. A.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword NANOSCIENCE AND NANOTECHNOLOGY ♦ MATERIALS SCIENCE ♦ EV RANGE ♦ GAIN ♦ GALLIUM ARSENIDES ♦ HAMILTONIANS ♦ HETEROJUNCTIONS ♦ HOLES ♦ INDIUM ARSENIDES ♦ QUANTUM WELLS ♦ VALENCE ♦ VISIBLE RADIATION
Abstract In this paper, we have simulated optical gain in type-II InGaAs/GaAsSb quantum well based nano-scale heterostructure. In order to simulate the optical gain, the heterostructure has been modeled with the help of six band k.p method. The 6 × 6 diagonalized k.p Hamiltonian has been solved to evaluate the valence sub-bands (i.e. light and heavy hole energies); and then optical matrix elements and optical gain within TE (Transverse Electric) mode has been calculated. The results obtained suggest that peak optical gain in the heterostructure can be achieved at the lasing wavelength ~ 1.95 µm (SWIR region) and at corresponding energy ~ 0.635 eV.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-08-28
Publisher Place United States
Volume Number 1675
Issue Number 1


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