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Author McCandless, B. E. ♦ Birkmire, R. W.
Sponsorship USDOE
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword SOLAR ENERGY ♦ CADMIUM COMPOUNDS ♦ TELLURIUM COMPOUNDS ♦ THIN FILMS ♦ CADMIUM TELLURIDES ♦ CADMIUM SULFIDES ♦ SOLAR CELLS ♦ SURFACE TREATMENTS ♦ HEAT TREATMENTS ♦ TEMPERATURE DEPENDENCE ♦ TEMPERATURE RANGE 0400-1000 K ♦ ELECTRICAL PROPERTIES ♦ STABILITY
Abstract The influence of processing conditions on the performance of polycrystalline thin-film CdTe-based solar cells and the relationship to device stability are addressed. Specifically, processing conditions with respect to the window layer, post-CdTe deposition treatments, and contacting treatments are examined. The use of high resistivity interlayers between the transparent conductive oxide and the CdS allows open circuit voltage to be maintained as the CdS thickness is reduced. CdS-CdTe interdiffusion is reduced by either use of a short 600&hthinsp;{degree}C anneal prior to CdCl{sub 2} vapor treatment or by use of CdTe{sub 1{minus}x}S{sub x} alloy absorber layers. Finally, the effects of CdTe{sub 1{minus}x}S{sub x} surface modification and Cu reaction on device current-voltage behavior are presented. {copyright} {ital 1999 American Institute of Physics.}
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-03-01
Publisher Place United States
Volume Number 462
Issue Number 1
Technical Publication No. CONF-980935-


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