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Author Crupi, F. ♦ Alioto, M. ♦ Franco, J. ♦ Magnone, P. ♦ Kaczer, B. ♦ Groeseneken, G. ♦ Mitard, J. ♦ Witters, L. ♦ Hoffmann, T.Y.
Sponsorship IEEE Computer Society ♦ Association for Computing Machinery (ACM)/SIGDA ♦ IEEE Computer Society Technical Committee on Design Automation
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1993
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics
Subject Keyword Silicon germanium ♦ Silicon ♦ Logic gates ♦ MOSFETs ♦ Very large scale integration ♦ Threshold voltage ♦ VLSI ♦ Aggressive voltage scaling ♦ digital circuits ♦ emerging technologies ♦ energy efficiency ♦ power-delay trade-off ♦ Silicon-Germanium
Abstract In this paper, the potential of Silicon-Germanium (SiGe) technology for VLSI logic applications is investigated from a circuit perspective for the first time. The study is based on experimental measurements on 45-nm SiGe pMOSFETs with a high- κ/metal gate stack, as well as on 45-nm Si pMOSFETs with identical gate stack for comparison. In the reference SiGe technology, an innovative technological solution is adopted that limits the SiGe material only to the channel region. The resulting SiGe device merges the higher speed of the Ge technology with the lower leakage of the Si technology. Appropriate circuit- and system-level metrics are introduced to identify the advantages offered by SiGe technology in VLSI circuits. Analysis is performed in the context of next-generation VLSI circuits that fully exploit circuit- and system-level techniques to improve the energy efficiency through aggressive voltage scaling, other than low-leakage techniques. Analysis shows that the SiGe technology has more efficient leakage-delay and dynamic energy-delay trade-offs at nominal supply, compared to Si technology. Moreover, it is shown that the traditional analysis performed at nominal supply actually underestimates the benefits of SiGe pMOSFETs, since the speed advantage of SiGe VLSI circuits is further emphasized at low voltages. This demonstrates that SiGe VLSI circuits benefit from aggressive voltage scaling significantly more than Si circuits, thereby making SiGe devices a very promising alternative to Si transistors in next-generation VLSI systems.
Description Author affiliation :: Adv. Res. Center on Electron. Syst. for Inf. & Commun. Technol. E. De Castro (ARCES), Univ. di Bologna, Bologna, Italy
Author affiliation :: Dipt. di Ing. dell'Inf. (DII), Univ. di Siena, Siena, Italy
Author affiliation :: Dipt. di Elettron., Inf. e Sist. (DEIS), Univ. della Calabria, Rende, Italy
Author affiliation :: Interuniv. Microelectron. Center (IMEC), Leuven, Belgium
ISSN 10638210
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2012-08-01
Publisher Place U.S.A.
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Volume Number 20
Issue Number 8
Size (in Bytes) 1.65 MB
Page Count 9
Starting Page 1487
Ending Page 1495


Source: IEEE Xplore Digital Library