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Author Oldham, W. ♦ Bahraman, A.
Sponsorship IEEE Lasers and Electro-Optics Society
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1965
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Electrooptic modulators ♦ Optical modulation ♦ Paramagnetic resonance ♦ P-n junctions ♦ Phase modulation ♦ Crystals ♦ Microwave theory and techniques ♦ Electromagnetic wave absorption ♦ Paramagnetic materials ♦ PIN photodiodes
Abstract The use of<tex>p-n</tex>junctions,<tex>p-i-n</tex>junctions, metal semiconductor junctions, and heterojunctions as phase modulators is considered. The allowed modes of propagation through such junctions formed in both isotropic and uniaxial crystals are derived. The dependence of the propagation constant on the electric field is explicitly derived to yield the phase modulation properties of each structure, and the various structures are compared as high-frequency modulators. Heterojunction and<tex>p-i-n</tex>junction modulators are found to be superior to<tex>p-n</tex>junction modulators. Metal semiconductor junctions are found to be too lossy in the visible, but become attractive in the infrared.
Description Author affiliation :: University of California, Berkeley, CA, USA
ISSN 00189197
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1967-07-01
Publisher Place U.S.A.
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Volume Number 3
Issue Number 7
Size (in Bytes) 2.59 MB
Page Count 9
Starting Page 278
Ending Page 286

Source: IEEE Xplore Digital Library