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Author Moy, A. M. ♦ Chen, A. C. ♦ Cheng, K. Y. ♦ Chou, L. J. ♦ Hsieh, K. C. ♦ Tu, C.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ GALLIUM ARSENIDES ♦ HETEROJUNCTIONS ♦ GALLIUM PHOSPHIDES ♦ INDIUM PHOSPHIDES ♦ LIGHT EMITTING DIODES ♦ VISIBLE RADIATION ♦ PHOTOLUMINESCENCE ♦ ELECTROLUMINESCENCE ♦ STRAINS ♦ HETEROSTRUCTURES ♦ QUANTUM WIRES
Abstract Utilizing the strain-induced lateral-layer ordering (SILO) process, we have grown Ga{sub {ital x}}In{sub 1{minus}{ital x}}P multiple quantum wires (MQWR) on ternary GaAs{sub 0.66}P{sub 0.34} substrates using a modified strain-balance mechanism. The resulting [110] lateral modulation occurred with a periodicity of {approximately}300 A. Two dimensions of quantum confinement were obtained by surrounding the laterally confined Ga{sub {ital x}}In{sub 1{minus}{ital x}}P regions by layers of higher-energy-gap Al{sub 0.15}Ga{sub 0.53}In{sub 0.32}P in the growth direction. A redshift in the photoluminescence emission was observed as the growth temperature was increased attributed to a stronger lateral composition modulation at the higher growth temperatures. Based on the modified strain-balance mechanism, light-emitting diodes with the Ga{sub {ital x}}In{sub 1{minus}{ital x}}P MQWR active region were fabricated using the SILO process. Strongly TE-polarized room-temperature electroluminescence from these devices was observed at 6470 A. {copyright} {ital 1996 American Institute of Physics.}
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-12-01
Publisher Department University of Illinois
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 80
Issue Number 12
Organization University of Illinois


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