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Author Prutskij, T. ♦ Makarov, N. ♦ Attolini, G.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ COMPARATIVE EVALUATIONS ♦ CRYSTALLOGRAPHY ♦ GALLIUM ALLOYS ♦ GALLIUM ARSENIDES ♦ GALLIUM PHOSPHIDES ♦ INDIUM ALLOYS ♦ INDIUM PHOSPHIDES ♦ ORGANOMETALLIC COMPOUNDS ♦ PHOTOLUMINESCENCE ♦ POLARIZATION ♦ SEMICONDUCTOR MATERIALS ♦ STRAINS ♦ TEMPERATURE DEPENDENCE ♦ TEMPERATURE RANGE 0000-0013 K ♦ TEMPERATURE RANGE 0013-0065 K ♦ TEMPERATURE RANGE 0065-0273 K ♦ VAPOR PHASE EPITAXY ♦ VAPORS
Abstract We studied the linear polarization of the photoluminescence (PL) emission of atomically ordered GaInAsP and GaInP alloys with different ordering parameters in the temperature range from 10 to 300 K. The epitaxial layers of these alloys were grown on GaAs and Ge (001) substrates by metal organic vapor phase epitaxy. The polarization of the PL emission propagating along different crystallographic axes depends on the value of biaxial strain in the layer and changes with temperature. We calculated the PL polarization patterns for different propagation directions as a function of biaxial strain using an existing model developed for ternary atomically ordered III-V alloys. Comparing the calculated PL polarization patterns with those obtained experimentally, we separated the variation of the PL polarization due to change of biaxial strain with temperature.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-03-21
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 119
Issue Number 11


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