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Author Shen, Xiao-Meng ♦ He, Zhao-Yu ♦ Liu, Shi ♦ Lin, Zhi-Yuan ♦ Zhang, Yong-Hang ♦ Smith, David J. ♦ McCartney, Martha R.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ DENSITY ♦ DEPLETION LAYER ♦ HOLOGRAPHY ♦ INDIUM ARSENIDES ♦ MOLECULAR BEAM EPITAXY ♦ PHOTODETECTORS ♦ RESOLUTION ♦ SUPERLATTICES ♦ X-RAY DIFFRACTION
Abstract Mid-wave and long-wave infrared nBn photodetectors with absorbers consisting of InAs/InAsSb superlattices and barriers consisting of InAs/AlGaSb(As) superlattices were grown using molecular beam epitaxy. High-resolution X-ray diffraction showing significant differences in Ga composition in the barrier layer, and different dark current behavior at 77 K, suggested the possibility of different types of band alignments between the barrier layer and the absorber for the mid- and long-wave infrared samples. Examination of the barrier layers using off-axis electron holography showed the presence of positive charge with an estimated density of 1.8 × 10{sup 17}/cm{sup 3} in the mid-wave sample as a result of a type-II band alignment, whereas negligible charge was detected in the long-wave sample, consistent with a type-I band alignment.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-09-21
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 12


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