|Author||Han, B. ♦ Neumayer, D. A. ♦ Schulz, D. L. ♦ Hinds, B. J. ♦ Marks, T. J.|
|Source||United States Department of Energy Office of Scientific and Technical Information|
|Subject Keyword||MATERIALS SCIENCE ♦ ALUMINIUM OXIDES ♦ CHEMICAL VAPOR DEPOSITION ♦ YTTRIUM OXIDES ♦ ELECTRICAL INSULATORS ♦ MILLER INDICES ♦ SCANNING ELECTRON MICROSCOPY ♦ THIN FILMS ♦ X-RAY DIFFRACTION ♦ ALUMINIUM COMPOUNDS ♦ CHALCOGENIDES ♦ CHEMICAL COATING ♦ COHERENT SCATTERING ♦ DEPOSITION ♦ DIFFRACTION ♦ ELECTRICAL EQUIPMENT ♦ ELECTRON MICROSCOPY ♦ EQUIPMENT ♦ FILMS ♦ MICROSCOPY ♦ OXIDES ♦ OXYGEN COMPOUNDS ♦ SCATTERING ♦ SURFACE COATING ♦ TRANSITION ELEMENT COMPOUNDS ♦ YTTRIUM COMPOUNDS 360202* -- Ceramics, Cermets, & Refractories-- Structure & Phase Studies|
|Abstract||The successful integration of high-temperature superconducting (HTS) materials into active and passive microelectronics technologies depends crucially upon advances in the fundamental science of thin film formation and performance. To this end, considerable progress has recently been made in the growth of HTS films by both physical vapor deposition (PVD) and metal-organic chemical vapor deposition (MOCVD) techniques. Equally important for multilayer device fabrication is the quest for lattice-matched, chemically compatible, low dielectric constant/low dielectric loss materials for use as substrates, buffers, dielectrics, insulators, and overlayers. As in HTS film formation, MOCVD offers the attraction for insulating ceramic film growth of the ability to coat complex shapes, simplified apparatus, adaptability to large scale-area depositions, and depositions at low temperatures. YAlO[sub 3] is an example of a promising insulating material for HTS device applications, having a good lattice and thermal expansion match with YBCO, BSCCO, and TBCCO as well as excellent dielectric properties [epsilon] [approx] 16 at 77 K, 10 GHz; tan [delta] = 1 [times] 10[sup [minus]5] at 77 K, 10 GHz. Furthermore, YA1O exhibits no phase transitions between 25 and 1300[degrees]C, which in other materials results in twinning and degradation of film properties. The authors report here the first in situ (not requiring a postanneal) deposition of phase-pure epitaxial thin films of YA1O by MOCVD. 12 refs., 4 figs.|
|Learning Resource Type||Article|
|Publisher Place||United States|
|Journal||Chemistry of Materials|
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