Thumbnail
Access Restriction
Open

Author Cullis, A. G. ♦ Chew, N. G. ♦ Whitehouse, C.R. ♦ Jacobson, D. C. ♦ Poate, J. M. ♦ Pearton, S.J.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ ALUMINIUM ARSENIDES ♦ PHYSICAL RADIATION EFFECTS ♦ GALLIUM ARSENIDES ♦ AMORPHOUS STATE ♦ ANNEALING ♦ ARGON IONS ♦ CRYSTALLIZATION ♦ DAMAGE ♦ EPITAXY ♦ ION COLLISIONS ♦ LOW TEMPERATURE ♦ THICKNESS ♦ ALUMINIUM COMPOUNDS ♦ ARSENIC COMPOUNDS ♦ ARSENIDES ♦ CHARGED PARTICLES ♦ COLLISIONS ♦ DIMENSIONS ♦ GALLIUM COMPOUNDS ♦ HEAT TREATMENTS ♦ IONS ♦ PHASE TRANSFORMATIONS ♦ PNICTIDES ♦ RADIATION EFFECTS ♦ Materials- Radiation Effects
Abstract When AlAs/GaAs layer samples are subjected to Ar{sup +} ion bombardment at liquid-nitrogen temperature, it is shown that very different damage structures are produced in the two materials. While the GaAs is relatively easily amorphized, the AlAs is quite resistant to damage accumulation and remains crystalline for the ion doses employed in these investigations. Epitaxial regrowth of buried amorphous GaAs layers of thicknesses up to 150 nm can be induced by rapid thermal annealing. It is demonstrated that differences in the initial damage state have a strong influence upon the nature of lattice defects produced by annealing.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1989-09-18
Publisher Place United States
Journal Applied Physics Letters
Volume Number 55
Issue Number 12


Open content in new tab

   Open content in new tab