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Author Wellenius, P. ♦ Muth, J. F. ♦ Smith, E. R. ♦ LeBoeuf, S. M. ♦ Everitt, H. O.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CONCENTRATION RATIO ♦ EMISSION SPECTROSCOPY ♦ ENERGY BEAM DEPOSITION ♦ ENERGY TRANSFER ♦ EUROPIUM COMPOUNDS ♦ EUROPIUM IONS ♦ GALLIUM OXIDES ♦ LASER RADIATION ♦ PHOTOLUMINESCENCE ♦ POLYCRYSTALS ♦ PULSED IRRADIATION ♦ RUTHERFORD BACKSCATTERING SPECTROSCOPY ♦ SAPPHIRE ♦ SUBSTRATES ♦ THIN FILMS ♦ TIME RESOLUTION ♦ X-RAY DIFFRACTION ♦ CHALCOGENIDES ♦ CHARGED PARTICLES ♦ COHERENT SCATTERING ♦ CORUNDUM ♦ CRYSTALS ♦ DEPOSITION ♦ DIFFRACTION ♦ DIMENSIONLESS NUMBERS ♦ ELECTROMAGNETIC RADIATION ♦ EMISSION ♦ FILMS ♦ GALLIUM COMPOUNDS ♦ IONS ♦ IRRADIATION ♦ LUMINESCENCE ♦ MINERALS ♦ OXIDE MINERALS ♦ OXIDES ♦ OXYGEN COMPOUNDS ♦ PHOTON EMISSION ♦ RADIATIONS ♦ RARE EARTH COMPOUNDS ♦ RESOLUTION ♦ SCATTERING ♦ SPECTROSCOPY ♦ SURFACE COATING ♦ TIMING PROPERTIES
Abstract Europium gallium oxide (Eu{sub x}Ga{sub 1-x}){sub 2}O{sub 3} thin films were deposited on sapphire substrates by pulsed laser deposition with varying Eu content from x=2.4 to 20 mol %. The optical and physical effects of high europium concentration on these thin films were studied using photoluminescence (PL) spectroscopy, x-ray diffraction (XRD), and Rutherford backscattering spectrometry. PL spectra demonstrate that emission due to the {sup 5}D{sub 0} to {sup 7}F{sub J} transitions in Eu{sup 3+} grows linearly with Eu content up to 10 mol %. Time-resolved PL indicates decay parameters remain similar for films with up to 10 mol % Eu. At 20 mol %, however, PL intensity decreases substantially and PL decay accelerates, indicative of parasitic energy transfer processes. XRD shows films to be polycrystalline and beta-phase for low Eu compositions. Increasing Eu content beyond 5 mol % does not continue to modify the film structure and thus, changes in PL spectra and decay cannot be attributed to structural changes in the host. These data indicate the optimal doping for optoelectronic devices based on (Eu{sub x}Ga{sub 1-x}){sub 2}O{sub 3} thin films is between 5 and 10 mol %.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2010-05-15
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 107
Issue Number 10


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