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Author Wensuo Chen ♦ Bo Zhang ♦ Zhaoji Li
Sponsorship IEEE Electron Devices Society
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1980
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Insulated gate bipolar transistors ♦ Anodes ♦ Silicon on insulator technology ♦ Insulation ♦ Voltage ♦ Electrons ♦ Power integrated circuits ♦ Switches ♦ Substrates ♦ 3-D n-region-controlled anode ♦ Forward drop ♦ negative differential resistance (NDR) ♦ segment-anode-n-p-n-LIGBT (SA-NPN-LIGBT) ♦ shorted-anode lateral insulated-gate bipolar transistor (SA-LIGBT) ♦ turn-off time
Abstract A novel lateral insulated-gate bipolar transistor (LIGBT) structure on an silicon-on-insulator (SOI) substrate is proposed and discussed. The 3-D n-region-controlled anode concept makes this new structure effectively suppress the negative-differential-resistance (NDR) regime in conducting state, and what is more, during turn- off state, there are two effective paths for electron extraction, and the switching speed is very fast. As simulation results show, without sacrificing the high current-handling capability, the ratios of turn-off times for the proposed structure compared to that of the segment-anode-n-p-n-LIGBT presented earlier and the conventional LIGBT are 1 : 1.57 and 1 : 35.58, respectively. Due to the 3-D anode structure, the proposed device has efficient area usage and can be fabricated by the conventional SOI high-voltage IC process, so it is a promising device used in power ICs.
Description Author affiliation :: State Key Lab. of Electron. Thin Film & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
ISSN 07413106
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2010-05-01
Publisher Place U.S.A.
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Volume Number 31
Issue Number 5
Size (in Bytes) 404.02 kB
Page Count 3
Starting Page 467
Ending Page 469


Source: IEEE Xplore Digital Library