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Author Kawano, M. ♦ Santo, K. ♦ Ikawa, M. ♦ Yamada, S. ♦ Kanashima, T. ♦ Hamaya, K.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ DIFFUSION ♦ DIFFUSION LENGTH ♦ EPITAXY ♦ HOLES ♦ IRON SILICIDES ♦ SEMICONDUCTOR JUNCTIONS ♦ SIGNALS ♦ SPIN
Abstract We experimentally show spin transport up to 125 K in a ∼40-nm-thick p-Ge(111) layer, epitaxially grown on a ferromagnetic Fe{sub 3}Si. From the magnitude of the spin signals, the spin diffusion length of the p-Ge(111) layer at 10 K can be estimated to be approximately 50 nm. To understand the detectable spin transport in the p-Ge(111), we should consider the energy splitting between heavy-hole and light-hole bands at the L point.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-07-11
Publisher Place United States
Journal Applied Physics Letters
Volume Number 109
Issue Number 2


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