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Author Jeong, S. ♦ Zacharias, H. ♦ Bokor, J.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ SILICON ♦ CHARGE CARRIERS ♦ SURFACE PROPERTIES ♦ THERMALIZATION ♦ ELECTRONIC STRUCTURE ♦ PHOTOEMISSION ♦ TIME RESOLUTION ♦ RELAXATION TIME ♦ SURFACE STATES
Abstract We present a study of ultrafast carrier dynamics on the clean Si(100)2{times}1 surface using time-resolved photoemission spectroscopy. A rapid thermalization inside the surface band is observed, and the carrier relaxation occurs on a time scale of a few hundred femtoseconds to a few picoseconds depending on the initial state energy. The relaxation time increases as the initial state energy decreases with respect to the band minimum. {copyright} {ital 1996 The American Physical Society.}
ISSN 01631829
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-12-01
Publisher Department Lawrence Berkeley National Laboratory
Publisher Place United States
Journal Physical Review, B: Condensed Matter
Volume Number 54
Issue Number 24
Organization Lawrence Berkeley National Laboratory


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