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Author Kumar, Rajesh ♦ Ali, S. Asad ♦ Naqvi, A. H. ♦ Virk, H. S. ♦ De, Udayan ♦ Avasthi, D. K. ♦ Prasad, Rajendra
Source IACS Kolkata
Content type Text
Publisher Indian J. Phys.
File Format PDF
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics
Subject Keyword Polypropylene polymer ♦ Silicon and Neon Ions ♦ Ion Beam Modification ♦ Carbon Clusters ♦ Band Gap Energy
Abstract A wide variety of material modifications in polymers have been studied by using ion irradiationtechniques. Extensive research has focused on to Swift Heavy Ions (MeV's energy), probably because of goodcontrollability and the large penetration length in polymers. High energy ion irradiation tends to damage polymerssignificantly by electronic excitation and ionization. It may result into the creation of latent tracks and can alsocause formation of radicals such as ablation, sputtering, chain scission and intermolecular cross-linking, creationof triple bonds and unsaturated bonds and loss volatile fragments. Polypropylene polymer films of thickness 50μm were irradiated to the fluences of 1 × 1010, 3 × 1010, 1 × 1011, 3 × 1011, 6 × 1011 and 1 × 1012 ions/cm2 with Si8+ions of 100 MeV energy from Pelletron accelerator at Inter University Accelerator Centre (IUAC), New Delhi andNe6+ ions of 145 MeV to the fluences of 108, 1010, 1011, 1012 and 1013 ions/cm3 from Variable Energy CyclotronCentre, Kolkata. Optical modifications were characterized by UV towards the red end of the spectrum with theincrease of the fluence. Value of optical band gap Eg shows a decreasing trend with ion fluence irradiated withboth kinds of ions. Cluster size N, the number of carbon atoms per conjugation length increases with increasingion dose. Cluster size also increases with the increase of electronic stopping power.
Education Level UG and PG
Learning Resource Type Article
Journal Indian J Phys
Volume Number 83
Issue Number 7
Page Count 8
Starting Page 969
Ending Page 976